1N8162e3

Billeder er kun til reference

specifikationer

Fabrikant
Microchip Technology
Kategorier
ESD Suppressors / TVS Diodes
Breakdown Voltage
28.5 V
Cd - Diode Capacitance
4 pF
Clamping Voltage
41.6 V
Ipp - Peak Pulse Current
3.6 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Number of Channels
1 Channel
Package / Case
A-Package-2
Polarity
Unidirectional
Pppm - Peak Pulse Power Dissipation
150 W
Product Type
TVS Diodes
Termination Style
Axial
Vesd - Voltage ESD Air Gap
-
Vesd - Voltage ESD Contact
-
Working Voltage
25 V

Seneste anmeldelser

Works. Find the price of this product is very good

fast delivery

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

Works. Recommend

Looks good

Du vil måske også syntes om

1N8147
Microchip Technology
1N8147
Microchip Technology
1N8147e3
Microchip Technology
1N8147e3
Microchip Technology

Personer, der kigger 1N8162e3 købte derefter

1N8147
Microchip Technology
1N8147
Microchip Technology
1N8147e3
Microchip Technology
1N8147e3
Microchip Technology

Relaterede nøgleord til 1N81

  • 1N8162e3 Integreret
  • 1N8162e3 RoHS
  • 1N8162e3 PDF-datablad
  • 1N8162e3 Blad
  • 1N8162e3 En del
  • 1N8162e3 Købe
  • 1N8162e3 Distributør
  • 1N8162e3 PDF
  • 1N8162e3 Komponent
  • 1N8162e3 IC`er
  • 1N8162e3 Download PDF
  • 1N8162e3 Download datablad
  • 1N8162e3 Levere
  • 1N8162e3 Leverandør
  • 1N8162e3 Pris
  • 1N8162e3 Datablad
  • 1N8162e3 Billede
  • 1N8162e3 Billede
  • 1N8162e3 Beholdning
  • 1N8162e3 lager
  • 1N8162e3 Original
  • 1N8162e3 billigste
  • 1N8162e3 Fremragende
  • 1N8162e3 Blyfri
  • 1N8162e3 Specifikation
  • 1N8162e3 Hot tilbud
  • 1N8162e3 Break Price
  • 1N8162e3 Teknisk data