Varenummer 2SA1618-Y(TE85L,F) Fabrikant Toshiba Kategorier Bipolar Transistors - BJT RoHS Blad 2SA1618-Y(TE85L,F) Beskrivelse Bipolar Transistors - BJT SMV PLN (LF) TRANSISTOR Pd=300mW F=1MHz
Fabrikant Toshiba Kategorier Bipolar Transistors - BJT Collector- Base Voltage VCBO - 50 V Collector- Emitter Voltage VCEO Max - 50 V Collector-Emitter Saturation Voltage - 0.1 V Configuration Dual Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 80 MHz Maximum DC Collector Current - 150 mA Maximum Operating Temperature + 125 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SMT-6 Packaging Cut Tape, Reel Pd - Power Dissipation 300 mW Transistor Polarity PNP