- Varenummer
- R8001CND3FRATL
- Fabrikant
- ROHM Semiconductor
- Kategorier
- MOSFET
- RoHS
- Blad
- Beskrivelse
- MOSFET 800V N-CH 1A POWER
R8001CND3FRATL
Billeder er kun til reference
specifikationer
- Fabrikant
- ROHM Semiconductor
- Kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 1 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- TO-252-3/2
- Packaging
- Cut Tape, Reel
- Pd - Power Dissipation
- 36 W
- Qg - Gate Charge
- 7.2 nC
- Rds On - Drain-Source Resistance
- 8.7 Ohms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 800 V
- Vgs - Gate-Source Voltage
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage
- 5.5 V
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Seneste anmeldelser
everything as it is written in the description of the same deductible prodovtsu deserved
Aleksov
goods very well received very good quality
Fabrice Cubaynes
all exactly and work. радиолюбителя useful set to, thank you)
Mahmoud Shendy
Works. Find the price of this product is very good
Maxim Krasnov
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
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R8001CND3FRATL Nyheder
03/14/2023
03/13/2023
03/09/2023
Relaterede nøgleord til R800
- R8001CND3FRATL Integreret
- R8001CND3FRATL RoHS
- R8001CND3FRATL PDF-datablad
- R8001CND3FRATL Blad
- R8001CND3FRATL En del
- R8001CND3FRATL Købe
- R8001CND3FRATL Distributør
- R8001CND3FRATL PDF
- R8001CND3FRATL Komponent
- R8001CND3FRATL IC`er
- R8001CND3FRATL Download PDF
- R8001CND3FRATL Download datablad
- R8001CND3FRATL Levere
- R8001CND3FRATL Leverandør
- R8001CND3FRATL Pris
- R8001CND3FRATL Datablad
- R8001CND3FRATL Billede
- R8001CND3FRATL Billede
- R8001CND3FRATL Beholdning
- R8001CND3FRATL lager
- R8001CND3FRATL Original
- R8001CND3FRATL billigste
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- R8001CND3FRATL Specifikation
- R8001CND3FRATL Hot tilbud
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- R8001CND3FRATL Teknisk data
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