Varenummer SQ1912EH-T1_GE3 Fabrikant Vishay / Siliconix Kategorier MOSFET RoHS Blad SQ1912EH-T1_GE3 Beskrivelse MOSFET 20V Vds 0.8A Id AEC-Q101 Qualified
Fabrikant Vishay / Siliconix Kategorier MOSFET Channel Mode Enhancement Id - Continuous Drain Current 800 mA Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case SOT-363-6 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 1.5 W Qg - Gate Charge 1.15 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 200 mOhms, 200 mOhms Technology SI Tradename TrenchFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 450 mV