- Varenummer
- RQ3G100GNTB
- Fabrikant
- ROHM Semiconductor
- Kategorier
- MOSFET
- RoHS
- Blad
- Beskrivelse
- MOSFET Nch 40V 10A Power MOSFET
RQ3G100GNTB
Billeder er kun til reference
specifikationer
- Fabrikant
- ROHM Semiconductor
- Kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 10 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- HSMT-8
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 2 W
- Qg - Gate Charge
- 8.4 nC
- Rds On - Drain-Source Resistance
- 11 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 40 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1.2 V
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Seneste anmeldelser
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Brenda Gfeller
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
Everything is fine!
Jane Doe
Received very good
Jakub Tyburski
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Personer, der kigger RQ3G100GNTB købte derefter
RQ3G100GNTB Nyheder
03/14/2023
03/13/2023
03/09/2023
Relaterede nøgleord til RQ3G
- RQ3G100GNTB Integreret
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