- Varenummer
- IPB65R190CFDA
- Fabrikant
- Infineon Technologies
- Kategorier
- MOSFET
- RoHS
- Blad
- Beskrivelse
- MOSFET N-Ch 650V 57.2A D2PAK-2
IPB65R190CFDA
Billeder er kun til reference
specifikationer
- Fabrikant
- Infineon Technologies
- Kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 17.5 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- TO-263-3
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 151 W
- Qg - Gate Charge
- 68 nC
- Qualification
- AEC-Q101
- Rds On - Drain-Source Resistance
- 171 mOhms
- Technology
- SI
- Tradename
- CoolMOS
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 3.5 V
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Seneste anmeldelser
Hello! Order received, very happy. Thank you very much!
Flavia
packed pretty good, all is ok,-seller.
Julianah Yungkim
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
Shipping a little 1 weeks, normal packing, the procedure is complete.
dennis kraft
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
Du vil måske også syntes om
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Personer, der kigger IPB65R190CFDA købte derefter
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
IPB65R190CFDA Nyheder
03/14/2023
03/13/2023
03/09/2023
Relaterede nøgleord til IPB6
- IPB65R190CFDA Integreret
- IPB65R190CFDA RoHS
- IPB65R190CFDA PDF-datablad
- IPB65R190CFDA Blad
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- IPB65R190CFDA Købe
- IPB65R190CFDA Distributør
- IPB65R190CFDA PDF
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- IPB65R190CFDA Download PDF
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