- Varenummer
- IXFX120N65X2
- Fabrikant
- IXYS
- Kategorier
- MOSFET
- RoHS
- Blad
- Beskrivelse
- MOSFET MOSFET 650V/120A Ultra Junction X2
IXFX120N65X2
Billeder er kun til reference
specifikationer
- Fabrikant
- IXYS
- Kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 120 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-247-3
- Packaging
- Tube
- Pd - Power Dissipation
- 1.25 kW
- Qg - Gate Charge
- 225 nC
- Rds On - Drain-Source Resistance
- 24 mOhms
- Technology
- SI
- Tradename
- HiPerFET
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Vgs - Gate-Source Voltage
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage
- 2.7 V
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Seneste anmeldelser
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
Works. Recommend
Rajiv
I received the product right, thank you very much 2018/12/03 ★★★★★
Haur Su
Parcel received shook cool all 10 pieces is not checked check unsubscribe
Bas van den Boogaard
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IXFX120N65X2 Nyheder
03/14/2023
03/13/2023
03/09/2023
Relaterede nøgleord til IXFX
- IXFX120N65X2 Integreret
- IXFX120N65X2 RoHS
- IXFX120N65X2 PDF-datablad
- IXFX120N65X2 Blad
- IXFX120N65X2 En del
- IXFX120N65X2 Købe
- IXFX120N65X2 Distributør
- IXFX120N65X2 PDF
- IXFX120N65X2 Komponent
- IXFX120N65X2 IC`er
- IXFX120N65X2 Download PDF
- IXFX120N65X2 Download datablad
- IXFX120N65X2 Levere
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- IXFX120N65X2 Datablad
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- IXFX120N65X2 Teknisk data
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