Varenummer RX3G18BGNC16 Fabrikant ROHM Semiconductor Kategorier MOSFET RoHS Blad RX3G18BGNC16 Beskrivelse MOSFET
Fabrikant ROHM Semiconductor Kategorier MOSFET Channel Mode Enhancement Id - Continuous Drain Current 180 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220AB-3 Packaging Tube Pd - Power Dissipation 125 W Qg - Gate Charge 168 nC Rds On - Drain-Source Resistance 1.64 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V