RX3G18BGNC16

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Varenummer
RX3G18BGNC16
Fabrikant
ROHM Semiconductor
Kategorier
MOSFET
RoHS
Blad
Beskrivelse
MOSFET

specifikationer

Fabrikant
ROHM Semiconductor
Kategorier
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
180 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220AB-3
Packaging
Tube
Pd - Power Dissipation
125 W
Qg - Gate Charge
168 nC
Rds On - Drain-Source Resistance
1.64 mOhms
Technology
SI
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
40 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

Seneste anmeldelser

High Quality driver, works excellent. It came to Moscow for 7 days.

Goods came in two weeks. Well packed. Track number tracked

Works. Recommend

I received the product right, thank you very much 2018/12/03 ★★★★★

Parcel received shook cool all 10 pieces is not checked check unsubscribe

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