GS66502B-TR

Billeder er kun til reference
Varenummer
GS66502B-TR
Fabrikant
GaN Systems
Kategorier
MOSFET
RoHS
Blad
Beskrivelse
MOSFET 650V, 7.5A, GaN E-mode, GaNPX package, Bottom-side cooled

specifikationer

Fabrikant
GaN Systems
Kategorier
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
7.5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Packaging
Reel
Qg - Gate Charge
1.6 nC
Rds On - Drain-Source Resistance
260 mOhms
Technology
GaN
Tradename
GaNPX
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
- 10 V, + 7 V
Vgs th - Gate-Source Threshold Voltage
2.6 V

Seneste anmeldelser

Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

it is safe and sound all, thank you seller!

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

The timer is running. 10 PCS. Packed properly.

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