TP65H070LSG-TR

Billeder er kun til reference

specifikationer

Fabrikant
Transphorm
Kategorier
RF JFET Transistors
Id - Continuous Drain Current
25 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
PQFN-8
Packaging
Cut Tape, Reel
Pd - Power Dissipation
96 W
Technology
GaN
Transistor Polarity
N-Channel
Transistor Type
HEMT
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Breakdown Voltage
- 20 V, + 20 V

Seneste anmeldelser

Everything is excellent! recommend this seller!

Decent quality, not минвелл certainly, but enough decent

Goods came in two weeks. Well packed. Track number tracked

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

Shipping a little 1 weeks, normal packing, the procedure is complete.

Du vil måske også syntes om

Personer, der kigger TP65H070LSG-TR købte derefter

Relaterede nøgleord til TP65

  • TP65H070LSG-TR Integreret
  • TP65H070LSG-TR RoHS
  • TP65H070LSG-TR PDF-datablad
  • TP65H070LSG-TR Blad
  • TP65H070LSG-TR En del
  • TP65H070LSG-TR Købe
  • TP65H070LSG-TR Distributør
  • TP65H070LSG-TR PDF
  • TP65H070LSG-TR Komponent
  • TP65H070LSG-TR IC`er
  • TP65H070LSG-TR Download PDF
  • TP65H070LSG-TR Download datablad
  • TP65H070LSG-TR Levere
  • TP65H070LSG-TR Leverandør
  • TP65H070LSG-TR Pris
  • TP65H070LSG-TR Datablad
  • TP65H070LSG-TR Billede
  • TP65H070LSG-TR Billede
  • TP65H070LSG-TR Beholdning
  • TP65H070LSG-TR lager
  • TP65H070LSG-TR Original
  • TP65H070LSG-TR billigste
  • TP65H070LSG-TR Fremragende
  • TP65H070LSG-TR Blyfri
  • TP65H070LSG-TR Specifikation
  • TP65H070LSG-TR Hot tilbud
  • TP65H070LSG-TR Break Price
  • TP65H070LSG-TR Teknisk data