- Varenummer
- GS-065-004-1-L-TR
- Fabrikant
- GaN Systems
- Kategorier
- MOSFET
- RoHS
- Blad
- Beskrivelse
- MOSFET 650V, 4A, GaN E-mode, 5x6 PDFN, Bottom-side cooled
GS-065-004-1-L-TR
Billeder er kun til reference
specifikationer
- Fabrikant
- GaN Systems
- Kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 4 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- PDFN-6
- Packaging
- Cut Tape, Reel
- Pd - Power Dissipation
- -
- Qg - Gate Charge
- 800 pC
- Rds On - Drain-Source Resistance
- 570 mOhms
- Technology
- GaN-on-Si
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Vgs - Gate-Source Voltage
- - 10 V, + 7 V
- Vgs th - Gate-Source Threshold Voltage
- 2.6 V
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Seneste anmeldelser
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Pat Davis
all exactly and work. радиолюбителя useful set to, thank you)
Mahmoud Shendy
Thank You all fine, packed very well
Ulrich Bundke
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
Du vil måske også syntes om
Global Specialties
Global Specialties
GaN Systems
GaN Systems
Personer, der kigger GS-065-004-1-L-TR købte derefter
Global Specialties
Global Specialties
GaN Systems
GaN Systems
GS-065-004-1-L-TR Nyheder
03/14/2023
03/13/2023
03/09/2023
Relaterede nøgleord til GS-0
- GS-065-004-1-L-TR Integreret
- GS-065-004-1-L-TR RoHS
- GS-065-004-1-L-TR PDF-datablad
- GS-065-004-1-L-TR Blad
- GS-065-004-1-L-TR En del
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- GS-065-004-1-L-TR Distributør
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- GS-065-004-1-L-TR Komponent
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- GS-065-004-1-L-TR Download PDF
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