GS-065-004-1-L

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Varenummer
GS-065-004-1-L
Fabrikant
GaN Systems
Kategorier
MOSFET
RoHS
Blad
Beskrivelse
MOSFET 650V, 3.5A, GaN E-HEMT, 5x6 PDFN, Bottom-side cooled

specifikationer

Fabrikant
GaN Systems
Kategorier
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
3.5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
PDFN-6
Packaging
Cut Tape, MouseReel, Reel
Pd - Power Dissipation
-
Qg - Gate Charge
700 pC
Rds On - Drain-Source Resistance
500 mOhms
Technology
GaN-on-Si
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
- 10 V, + 7 V
Vgs th - Gate-Source Threshold Voltage
1.4 V

Seneste anmeldelser

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

The timer is running. 10 PCS. Packed properly.

Seems well have not tested

Good material. Great seller, efficient and insurance. Ok

I received the product right, thank you very much 2018/12/03 ★★★★★

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