- Varenummer
- TK100A10N1,S4X
- Fabrikant
- Toshiba
- Kategorier
- MOSFET
- RoHS
- Blad
- Beskrivelse
- MOSFET MOSFET NCh 3.1ohm VGS10V10uAVDS100V
TK100A10N1,S4X
Billeder er kun til reference
specifikationer
- Fabrikant
- Toshiba
- Kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 100 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-220-3
- Packaging
- Tube
- Pd - Power Dissipation
- 45 W
- Qg - Gate Charge
- 140 nC
- Rds On - Drain-Source Resistance
- 3.1 mOhms
- Technology
- SI
- Tradename
- U-MOSVIII-H
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
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Seneste anmeldelser
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Paolo Giazzi
Yes, they are all here. :)
sudheer kumar sirra
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
สิทธิศักดิ์ วันดี
Works. Recommend
Rajiv
Du vil måske også syntes om
Personer, der kigger TK100A10N1,S4X købte derefter
TK100A10N1,S4X Nyheder
03/14/2023
03/13/2023
03/09/2023
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