- Varenummer
- TK100A08N1,S4X
- Fabrikant
- Toshiba
- Kategorier
- MOSFET
- RoHS
- Blad
- Beskrivelse
- MOSFET MOSFET NCh 2.6ohm VGS10V10uAVDS80V
TK100A08N1,S4X
Billeder er kun til reference
specifikationer
- Fabrikant
- Toshiba
- Kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 100 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-220-3
- Packaging
- Tube
- Pd - Power Dissipation
- 45 W
- Qg - Gate Charge
- 130 nC
- Rds On - Drain-Source Resistance
- 2.6 mOhms
- Technology
- SI
- Tradename
- U-MOSVIII-H
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 80 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
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Seneste anmeldelser
Teşekkürler
Ashir Hussain
Works. Find the price of this product is very good
Maxim Krasnov
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
the photo in comparison with cheap. Delivery fast
Kaido Kevvai
Seems well have not tested
Hazel Gooby
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Personer, der kigger TK100A08N1,S4X købte derefter
TK100A08N1,S4X Nyheder
03/14/2023
03/13/2023
03/09/2023
Relaterede nøgleord til TK10
- TK100A08N1,S4X Integreret
- TK100A08N1,S4X RoHS
- TK100A08N1,S4X PDF-datablad
- TK100A08N1,S4X Blad
- TK100A08N1,S4X En del
- TK100A08N1,S4X Købe
- TK100A08N1,S4X Distributør
- TK100A08N1,S4X PDF
- TK100A08N1,S4X Komponent
- TK100A08N1,S4X IC`er
- TK100A08N1,S4X Download PDF
- TK100A08N1,S4X Download datablad
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- TK100A08N1,S4X Datablad
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- TK100A08N1,S4X Teknisk data
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