- Varenummer
- RQ3E070BNTB
- Fabrikant
- ROHM Semiconductor
- Kategorier
- MOSFET
- RoHS
- Blad
- Beskrivelse
- MOSFET 4.5V Drive Nch MOSFET
RQ3E070BNTB
Billeder er kun til reference
specifikationer
- Fabrikant
- ROHM Semiconductor
- Kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 7 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- HSMT-8
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 2 W
- Qg - Gate Charge
- 8.9 nC
- Rds On - Drain-Source Resistance
- 20 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V
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Seneste anmeldelser
Hello! Order received, very happy. Thank you very much!
Flavia
Thank You all fine, packed very well
Ulrich Bundke
The goods are OK, thank you dealers.
CHARLES SANTOS
The timer is running. 10 PCS. Packed properly.
Karina Erdmann
Seems well have not tested
Hazel Gooby
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RQ3E070BNTB Nyheder
03/14/2023
03/13/2023
03/09/2023
Relaterede nøgleord til RQ3E
- RQ3E070BNTB Integreret
- RQ3E070BNTB RoHS
- RQ3E070BNTB PDF-datablad
- RQ3E070BNTB Blad
- RQ3E070BNTB En del
- RQ3E070BNTB Købe
- RQ3E070BNTB Distributør
- RQ3E070BNTB PDF
- RQ3E070BNTB Komponent
- RQ3E070BNTB IC`er
- RQ3E070BNTB Download PDF
- RQ3E070BNTB Download datablad
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- RQ3E070BNTB Teknisk data
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