- Varenummer
- RQ3E080BNTB
- Fabrikant
- ROHM Semiconductor
- Kategorier
- MOSFET
- RoHS
- Blad
- Beskrivelse
- MOSFET 4.5V Drive Nch MOSFET
RQ3E080BNTB
Billeder er kun til reference
specifikationer
- Fabrikant
- ROHM Semiconductor
- Kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 8 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- HSMT-8
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 2 W
- Qg - Gate Charge
- 14.5 nC
- Rds On - Drain-Source Resistance
- 11 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
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Seneste anmeldelser
Received, Fast shipping, not checked yet
Roy Boustany
Quickly came to CET, all in one package. Look at the rules
Earl Sault
Thank You all fine, packed very well
Ulrich Bundke
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
Works. Recommend
Rajiv
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RQ3E080BNTB Nyheder
03/14/2023
03/13/2023
03/09/2023
Relaterede nøgleord til RQ3E
- RQ3E080BNTB Integreret
- RQ3E080BNTB RoHS
- RQ3E080BNTB PDF-datablad
- RQ3E080BNTB Blad
- RQ3E080BNTB En del
- RQ3E080BNTB Købe
- RQ3E080BNTB Distributør
- RQ3E080BNTB PDF
- RQ3E080BNTB Komponent
- RQ3E080BNTB IC`er
- RQ3E080BNTB Download PDF
- RQ3E080BNTB Download datablad
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- RQ3E080BNTB Teknisk data
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