GS66516B-TR

Billeder er kun til reference
Varenummer
GS66516B-TR
Fabrikant
GaN Systems
Kategorier
MOSFET
RoHS
Blad
Beskrivelse
MOSFET 650V, 60A, GaN E-mode, GaNPX package, Top-side cooling

specifikationer

Fabrikant
GaN Systems
Kategorier
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
60 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Packaging
Reel
Qg - Gate Charge
14.2 nC
Rds On - Drain-Source Resistance
32 mOhms
Technology
GaN
Tradename
GaNPX
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
- 10 V, + 7 V
Vgs th - Gate-Source Threshold Voltage
2.6 V

Seneste anmeldelser

Quickly came to CET, all in one package. Look at the rules

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Takes 8 days to Japan. Good!

Yes, they are all here. :)

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

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