GS-065-011-2-L-MR

Billeder er kun til reference
Varenummer
GS-065-011-2-L-MR
Fabrikant
GaN Systems
Kategorier
MOSFET
RoHS
Blad
Beskrivelse
MOSFET 650V, 11A, GaN E-mode, 8x8 PDFN, Bottom-side cooled

specifikationer

Fabrikant
GaN Systems
Kategorier
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
11 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
PDFN-6
Packaging
Cut Tape, MouseReel, Reel
Pd - Power Dissipation
-
Qg - Gate Charge
2 NC
Rds On - Drain-Source Resistance
150 mOhms
Technology
GaN-on-Si
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
- 10 V, + 7 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

Seneste anmeldelser

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

packed pretty good, all is ok,-seller.

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Fast shippng. Good quality. I recomend this seller.

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

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