- Varenummer
- GS-065-008-1-L
- Fabrikant
- GaN Systems
- Kategorier
- MOSFET
- RoHS
- Blad
- Beskrivelse
- MOSFET 650V, 8A, GaN E-HEMT, 5x6 PDFN, Bottom-side cooled
GS-065-008-1-L
Billeder er kun til reference
specifikationer
- Fabrikant
- GaN Systems
- Kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 8 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- PDFN-6
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- -
- Qg - Gate Charge
- 1.5 nC
- Rds On - Drain-Source Resistance
- 225 mOhms
- Technology
- GaN-on-Si
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Vgs - Gate-Source Voltage
- - 10 V, + 7 V
- Vgs th - Gate-Source Threshold Voltage
- 1.4 V
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Seneste anmeldelser
goods very well received very good quality
Fabrice Cubaynes
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Dane Gogic
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
Works. Find the price of this product is very good
Maxim Krasnov
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
Du vil måske også syntes om
Global Specialties
Global Specialties
GaN Systems
GaN Systems
Personer, der kigger GS-065-008-1-L købte derefter
Global Specialties
Global Specialties
GaN Systems
GaN Systems
GS-065-008-1-L Nyheder
03/14/2023
03/13/2023
03/09/2023
Relaterede nøgleord til GS-0
- GS-065-008-1-L Integreret
- GS-065-008-1-L RoHS
- GS-065-008-1-L PDF-datablad
- GS-065-008-1-L Blad
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- GS-065-008-1-L Download PDF
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