- Varenummer
- GS-065-011-1-L
- Fabrikant
- GaN Systems
- Kategorier
- MOSFET
- RoHS
- Blad
- Beskrivelse
- MOSFET 650V, 11A, GaN E-HEMT, 5x6 PDFN, Bottom-side cooled
GS-065-011-1-L
Billeder er kun til reference
specifikationer
- Fabrikant
- GaN Systems
- Kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 11 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- PDFN-6
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- -
- Qg - Gate Charge
- 2 NC
- Rds On - Drain-Source Resistance
- 150 mOhms
- Technology
- GaN-on-Si
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Vgs - Gate-Source Voltage
- - 10 V, + 7 V
- Vgs th - Gate-Source Threshold Voltage
- 1.5 V
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Seneste anmeldelser
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Eitan Hammami
Hello! Order received, very happy. Thank you very much!
Flavia
Works. Find the price of this product is very good
Maxim Krasnov
fast delivery
Mike Ibarra
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
Du vil måske også syntes om
Global Specialties
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Personer, der kigger GS-065-011-1-L købte derefter
Global Specialties
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GaN Systems
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GS-065-011-1-L Nyheder
03/14/2023
03/13/2023
03/09/2023
Relaterede nøgleord til GS-0
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