- Varenummer
- TK10A60E,S4X
- Fabrikant
- Toshiba
- Kategorier
- MOSFET
- RoHS
- Blad
- TK10A60E,S4X
- Beskrivelse
- MOSFET PLN MOS 600V 750mOhm (VGS=10V) TO-220SIS
TK10A60E,S4X
Billeder er kun til reference
specifikationer
- Fabrikant
- Toshiba
- Kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 10 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-220-3
- Pd - Power Dissipation
- 45 W
- Qg - Gate Charge
- 40 nC
- Rds On - Drain-Source Resistance
- 750 mOhms
- Technology
- SI
- Tradename
- DTMOSIV
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Vgs - Gate-Source Voltage
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
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Seneste anmeldelser
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
Quickly came to CET, all in one package. Look at the rules
Earl Sault
Perfectly.
Sensofar Tech, SL
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
Du vil måske også syntes om
Personer, der kigger TK10A60E,S4X købte derefter
TK10A60E,S4X Nyheder
03/14/2023
03/13/2023
03/09/2023
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