- Varenummer
- RQ3E100BNTB
- Fabrikant
- ROHM Semiconductor
- Kategorier
- MOSFET
- RoHS
- Blad
- Beskrivelse
- MOSFET 4.5V Drive Nch MOSFET
RQ3E100BNTB
Billeder er kun til reference
specifikationer
- Fabrikant
- ROHM Semiconductor
- Kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 13.5 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- HSMT-8
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 15 W
- Qg - Gate Charge
- 22 nC
- Rds On - Drain-Source Resistance
- 7.7 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V
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Seneste anmeldelser
Everything is excellent! recommend this seller!
Stoyan Chaykov
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Kathrin Leibfritz
The timer is running. 10 PCS. Packed properly.
Karina Erdmann
Everything is fine!
Jane Doe
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RQ3E100BNTB Nyheder
03/14/2023
03/13/2023
03/09/2023
Relaterede nøgleord til RQ3E
- RQ3E100BNTB Integreret
- RQ3E100BNTB RoHS
- RQ3E100BNTB PDF-datablad
- RQ3E100BNTB Blad
- RQ3E100BNTB En del
- RQ3E100BNTB Købe
- RQ3E100BNTB Distributør
- RQ3E100BNTB PDF
- RQ3E100BNTB Komponent
- RQ3E100BNTB IC`er
- RQ3E100BNTB Download PDF
- RQ3E100BNTB Download datablad
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- RQ3E100BNTB Datablad
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- RQ3E100BNTB Teknisk data
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