- Varenummer
- RQ3E150GNTB
- Fabrikant
- ROHM Semiconductor
- Kategorier
- MOSFET
- RoHS
- Blad
- Beskrivelse
- MOSFET 4.5V Drive Nch MOSFET
RQ3E150GNTB
Billeder er kun til reference
specifikationer
- Fabrikant
- ROHM Semiconductor
- Kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 15 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- HSMT-8
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 2 W
- Qg - Gate Charge
- 15.3 nC
- Rds On - Drain-Source Resistance
- 6.1 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
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Seneste anmeldelser
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Paolo Giazzi
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
Quickly came to CET, all in one package. Look at the rules
Earl Sault
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
สิทธิศักดิ์ วันดี
Parcel received shook cool all 10 pieces is not checked check unsubscribe
Bas van den Boogaard
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RQ3E150GNTB Nyheder
03/14/2023
03/13/2023
03/09/2023
Relaterede nøgleord til RQ3E
- RQ3E150GNTB Integreret
- RQ3E150GNTB RoHS
- RQ3E150GNTB PDF-datablad
- RQ3E150GNTB Blad
- RQ3E150GNTB En del
- RQ3E150GNTB Købe
- RQ3E150GNTB Distributør
- RQ3E150GNTB PDF
- RQ3E150GNTB Komponent
- RQ3E150GNTB IC`er
- RQ3E150GNTB Download PDF
- RQ3E150GNTB Download datablad
- RQ3E150GNTB Levere
- RQ3E150GNTB Leverandør
- RQ3E150GNTB Pris
- RQ3E150GNTB Datablad
- RQ3E150GNTB Billede
- RQ3E150GNTB Billede
- RQ3E150GNTB Beholdning
- RQ3E150GNTB lager
- RQ3E150GNTB Original
- RQ3E150GNTB billigste
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- RQ3E150GNTB Specifikation
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- RQ3E150GNTB Break Price
- RQ3E150GNTB Teknisk data
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