TK100L60W,VQ

Billeder er kun til reference
Varenummer
TK100L60W,VQ
Fabrikant
Toshiba
Kategorier
MOSFET
RoHS
Blad
Beskrivelse
MOSFET DTMOSIV 600V 18mOhm 100A 800W 15000pF

specifikationer

Fabrikant
Toshiba
Kategorier
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
100 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-3PL-3
Packaging
Tube
Pd - Power Dissipation
797 W
Qg - Gate Charge
360 nC
Rds On - Drain-Source Resistance
15 mOhms
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V

Seneste anmeldelser

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Works. Recommend

Looks good

Received very good

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