- Varenummer
- RQ3E130MNTB1
- Fabrikant
- ROHM Semiconductor
- Kategorier
- MOSFET
- RoHS
- Blad
- Beskrivelse
- MOSFET 4.5V Drive Nch MOSFET
RQ3E130MNTB1
Billeder er kun til reference
specifikationer
- Fabrikant
- ROHM Semiconductor
- Kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 13 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- -
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- HSMT-8
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 2 W
- Qg - Gate Charge
- 14 nC
- Rds On - Drain-Source Resistance
- 5.8 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
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Seneste anmeldelser
Quick delivery. Secure packing. Excellent product. Thank you
BHADRESH PATEL
Hello! Order received, very happy. Thank you very much!
Flavia
Thank You all fine, packed very well
Ulrich Bundke
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
fast delivery
Mike Ibarra
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RQ3E130MNTB1 Nyheder
03/14/2023
03/13/2023
03/09/2023
Relaterede nøgleord til RQ3E
- RQ3E130MNTB1 Integreret
- RQ3E130MNTB1 RoHS
- RQ3E130MNTB1 PDF-datablad
- RQ3E130MNTB1 Blad
- RQ3E130MNTB1 En del
- RQ3E130MNTB1 Købe
- RQ3E130MNTB1 Distributør
- RQ3E130MNTB1 PDF
- RQ3E130MNTB1 Komponent
- RQ3E130MNTB1 IC`er
- RQ3E130MNTB1 Download PDF
- RQ3E130MNTB1 Download datablad
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- RQ3E130MNTB1 Datablad
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- RQ3E130MNTB1 billigste
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- RQ3E130MNTB1 Hot tilbud
- RQ3E130MNTB1 Break Price
- RQ3E130MNTB1 Teknisk data
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