- Varenummer
- RQ3E180AJTB
- Fabrikant
- ROHM Semiconductor
- Kategorier
- MOSFET
- RoHS
- Blad
- Beskrivelse
- MOSFET Nch 30V 18A Middle Power MOSFET
RQ3E180AJTB
Billeder er kun til reference
specifikationer
- Fabrikant
- ROHM Semiconductor
- Kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 18 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- HSMT-8
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 30 W
- Qg - Gate Charge
- 39 nC
- Rds On - Drain-Source Resistance
- 3.5 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- - 12 V, + 12 V
- Vgs th - Gate-Source Threshold Voltage
- 500 mV
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Seneste anmeldelser
Quick delivery. Secure packing. Excellent product. Thank you
BHADRESH PATEL
Yes, they are all here. :)
sudheer kumar sirra
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
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Personer, der kigger RQ3E180AJTB købte derefter
ROHM Semiconductor
ROHM Semiconductor
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RQ3E180AJTB Nyheder
03/14/2023
03/13/2023
03/09/2023
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