- Varenummer
- TK100E08N1,S1X
- Fabrikant
- Toshiba
- Kategorier
- MOSFET
- RoHS
- Blad
- Beskrivelse
- MOSFET 80V N-Ch PWR FET 9000pF 130nC 214A
TK100E08N1,S1X
Billeder er kun til reference
specifikationer
- Fabrikant
- Toshiba
- Kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 214 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-220-3
- Packaging
- Tube
- Pd - Power Dissipation
- 255 W
- Qg - Gate Charge
- 130 nC
- Rds On - Drain-Source Resistance
- 3.2 mOhms
- Technology
- SI
- Tradename
- U-MOSVIII-H
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 80 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2 V
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Seneste anmeldelser
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Eitan Hammami
Works. Find the price of this product is very good
Maxim Krasnov
fast delivery
Mike Ibarra
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
สิทธิศักดิ์ วันดี
The timer is running. 10 PCS. Packed properly.
Karina Erdmann
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Personer, der kigger TK100E08N1,S1X købte derefter
TK100E08N1,S1X Nyheder
03/14/2023
03/13/2023
03/09/2023
Relaterede nøgleord til TK10
- TK100E08N1,S1X Integreret
- TK100E08N1,S1X RoHS
- TK100E08N1,S1X PDF-datablad
- TK100E08N1,S1X Blad
- TK100E08N1,S1X En del
- TK100E08N1,S1X Købe
- TK100E08N1,S1X Distributør
- TK100E08N1,S1X PDF
- TK100E08N1,S1X Komponent
- TK100E08N1,S1X IC`er
- TK100E08N1,S1X Download PDF
- TK100E08N1,S1X Download datablad
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- TK100E08N1,S1X Datablad
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- TK100E08N1,S1X Teknisk data
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