- Varenummer
- TK100E06N1,S1X
- Fabrikant
- Toshiba
- Kategorier
- MOSFET
- RoHS
- Blad
- Beskrivelse
- MOSFET 60V N-Ch PWR FET 1.9mOhm 10V 10uA
TK100E06N1,S1X
Billeder er kun til reference
specifikationer
- Fabrikant
- Toshiba
- Kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 263 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-220-3
- Packaging
- Tube
- Pd - Power Dissipation
- 255 W
- Qg - Gate Charge
- 140 nC
- Rds On - Drain-Source Resistance
- 1.9 mOhms
- Technology
- SI
- Tradename
- U-MOSVIII-H
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2 V
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Seneste anmeldelser
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Pat Davis
Perfectly.
Sensofar Tech, SL
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Kathrin Leibfritz
Works. Recommend
Rajiv
Long Service and Russia!
Alex Yu
Du vil måske også syntes om
Personer, der kigger TK100E06N1,S1X købte derefter
TK100E06N1,S1X Nyheder
03/14/2023
03/13/2023
03/09/2023
Relaterede nøgleord til TK10
- TK100E06N1,S1X Integreret
- TK100E06N1,S1X RoHS
- TK100E06N1,S1X PDF-datablad
- TK100E06N1,S1X Blad
- TK100E06N1,S1X En del
- TK100E06N1,S1X Købe
- TK100E06N1,S1X Distributør
- TK100E06N1,S1X PDF
- TK100E06N1,S1X Komponent
- TK100E06N1,S1X IC`er
- TK100E06N1,S1X Download PDF
- TK100E06N1,S1X Download datablad
- TK100E06N1,S1X Levere
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- TK100E06N1,S1X Pris
- TK100E06N1,S1X Datablad
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- TK100E06N1,S1X Specifikation
- TK100E06N1,S1X Hot tilbud
- TK100E06N1,S1X Break Price
- TK100E06N1,S1X Teknisk data
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