Varenummer RQ3E110AJTB Fabrikant ROHM Semiconductor Kategorier MOSFET RoHS Blad RQ3E110AJTB Beskrivelse MOSFET 30V N-CHANNEL 24A
Fabrikant ROHM Semiconductor Kategorier MOSFET Channel Mode Enhancement Id - Continuous Drain Current 24 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case HSMT-8 Packaging Cut Tape, Reel Pd - Power Dissipation 15 W Qg - Gate Charge 13.5 nC Rds On - Drain-Source Resistance 11.7 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 500 mV