- Varenummer
- GS-065-011-2-L-TR
- Fabrikant
- GaN Systems
- Kategorier
- MOSFET
- RoHS
- Blad
- Beskrivelse
- MOSFET 650V, 11A, GaN E-mode, 8x8 PDFN, Bottom-side cooled
GS-065-011-2-L-TR
Billeder er kun til reference
specifikationer
- Fabrikant
- GaN Systems
- Kategorier
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 11 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- PDFN-6
- Packaging
- Cut Tape, MouseReel, Reel
- Qg - Gate Charge
- 2 NC
- Rds On - Drain-Source Resistance
- 150 mOhms
- Technology
- GaN-on-Si
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Vgs - Gate-Source Voltage
- - 10 V, + 7 V
- Vgs th - Gate-Source Threshold Voltage
- 1.5 V
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Seneste anmeldelser
it is safe and sound all, thank you seller!
Arturo Madril
Thank You all fine, packed very well
Ulrich Bundke
The goods are OK, thank you dealers.
CHARLES SANTOS
Looks good
Michael Beck
I received the product right, thank you very much 2018/12/03 ★★★★★
Haur Su
Du vil måske også syntes om
Global Specialties
Global Specialties
GaN Systems
GaN Systems
Personer, der kigger GS-065-011-2-L-TR købte derefter
Global Specialties
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GaN Systems
GaN Systems
GS-065-011-2-L-TR Nyheder
03/14/2023
03/13/2023
03/09/2023
Relaterede nøgleord til GS-0
- GS-065-011-2-L-TR Integreret
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- GS-065-011-2-L-TR Blad
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