- Varenummer
- RQ3E150MNTB1
- Fabrikant
- ROHM Semiconductor
- Kategorier
- MOSFET
- RoHS
- Blad
- Beskrivelse
- MOSFET 4.5V Drive Nch MOSFET
RQ3E150MNTB1
Billeder er kun til reference
specifikationer
- Fabrikant
- ROHM Semiconductor
- Kategorier
- MOSFET
- Id - Continuous Drain Current
- 15 A
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- HSMT-8
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 2 W
- Qg - Gate Charge
- 20 nC
- Rds On - Drain-Source Resistance
- 4.8 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
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Seneste anmeldelser
Takes 8 days to Japan. Good!
Alex Fragkos
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Dane Gogic
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Brenda Gfeller
Thank You all fine, packed very well
Ulrich Bundke
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
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RQ3E150MNTB1 Nyheder
03/14/2023
03/13/2023
03/09/2023
Relaterede nøgleord til RQ3E
- RQ3E150MNTB1 Integreret
- RQ3E150MNTB1 RoHS
- RQ3E150MNTB1 PDF-datablad
- RQ3E150MNTB1 Blad
- RQ3E150MNTB1 En del
- RQ3E150MNTB1 Købe
- RQ3E150MNTB1 Distributør
- RQ3E150MNTB1 PDF
- RQ3E150MNTB1 Komponent
- RQ3E150MNTB1 IC`er
- RQ3E150MNTB1 Download PDF
- RQ3E150MNTB1 Download datablad
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- RQ3E150MNTB1 Datablad
- RQ3E150MNTB1 Billede
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- RQ3E150MNTB1 Teknisk data
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